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TK62N60X,S1F

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
TK62N60X,S1F Image
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Nimewo Pati: TK62N60X,S1F
Manifakti / Brand: Toshiba Semiconductor and Storage
Pwodwi deskripsyon MOSFET N-CH 600V 61.8A TO-247
Datasheets: TK62N60X,S1F.pdf
RoHs Status Plon gratis / RoHS konfòme
Stock kondisyon 8406 pcs stock
Bato de Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 8406 pcs
Referans Pri (Nan dola ameriken)
1 pcs
$4.134
30 pcs
$3.391
120 pcs
$3.06
510 pcs
$2.564
Mande Quote
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Total:$4.134

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Espesifikasyon nan TK62N60X,S1F

Nimewo Pati TK62N60X,S1F Manifakti Toshiba Semiconductor and Storage
Deskripsyon MOSFET N-CH 600V 61.8A TO-247 Plon gratis Status / RoHS Status Plon gratis / RoHS konfòme
Kantite ki disponib 8406 pcs Done fèy TK62N60X,S1F.pdf
Vgs (th) (Max) @ Id 3.5V @ 3.1mA Vgs (Max) ±30V
Teknoloji MOSFET (Metal Oxide) Founisè Aparèy pake TO-247
Seri DTMOSIV-H Rds Sou (Max) @ Id, Vgs 40 mOhm @ 21A, 10V
Dissipasyon pouvwa (Max) 400W (Tc) Anbalaj Tube
Pake / Ka TO-247-3 Lòt non yo TK62N60X,S1F(S
TK62N60XS1F
Operating Tanperati 150°C (TJ) Mounting Kalite Through Hole
Imidite sansiblite Nivo (MSL) 1 (Unlimited) Plon gratis Status / RoHS Status Lead free / RoHS Compliant
Kapasite Antre (Ciss) (Max) @ Vds 6500pF @ 300V Pòtay Charge (Qg) (Max) @ Vgs 135nC @ 10V
Fèt tip N-Channel FET Feature Super Junction
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V Drenaj Sous Voltage (Vdss) 600V
Detaye Deskripsyon N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-247 Kouran - Kontini Drain (Id) @ 25 ° C 61.8A (Ta)

Shipment

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(SÈLMAN pou sirkwi entegre, pwoteksyon sikwi, RF / IF ak RFID, optoelektronik, sensor, transducers, transformateur, izolan, switch, rle)

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