Transistè - IGBTs - Single
Konpayi fabrikasyon Rekòmande
- International Rectifier (Infineon Technologies)
- Sou 1ye avril, 1999, Siemens Semiconductors te vin Infineon Technologies. Yon konpayi dinamik plis fleksib adapte pou siksè nan konpetitif, tout tan-chanje mond lan nan microelectronics. Infineon se yon dirijan designer mondyal, manifakti ak founisè nan yon gwo ranje semi-conducteurs yo itilize na...Detay yo
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IRGP4640DPBF
Infineon Technologies
Deskripsyon:IGBT 600V 65A 250W TO247AD
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IRG7PH46UD-EP
International Rectifier (Infineon Technologies)
Deskripsyon:IGBT 1200V 108A COPAK247
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IRG4BC20FDPBF
International Rectifier (Infineon Technologies)
Deskripsyon:IGBT 600V 16A 60W TO220AB
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IKP15N65H5XKSA1
International Rectifier (Infineon Technologies)
Deskripsyon:IGBT 650V 30A 105W PG-TO220-3
- IXYS Corporation
- - IXYS Corporation ofri yon liy gwo High Semiconductors pouvwa, ki gen ladan ki ba sou-rezistans Power MOSFETs, ultra vit switch IGBTs, vit Recovery Diodes (FREDs), SCR ak modil dyode, pon redresman, ak ICS Interface pouvwa. Detay yo
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IXXX200N65B4
IXYS Corporation
Deskripsyon:IGBT 650V 370A 1150W PLUS247
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IXGP20N120A3
IXYS Corporation
Deskripsyon:IGBT 1200V 40A 180W TO220
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IXBH2N250
IXYS Corporation
Deskripsyon:IGBT 2500V 5A 32W TO247
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IXGH48N60C3
IXYS Corporation
Deskripsyon:IGBT 600V 75A 300W TO247AD
- STMicroelectronics
- - STMicroelectronics se yon konpayi endepandan semi-conducteur endepandan e li se yon lidè nan devlope ak fournir solisyon semi-conducteurs atravè spectre a nan aplikasyon pou microelectronics. Yon konbinezon rival nan Silisyòm ak sistèm ekspètiz, fòs manifakti, Pwopriyete entelektyèl (IP) p...Detay yo
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STGP10NC60H
STMicroelectronics
Deskripsyon:IGBT 600V 20A 60W TO220
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STGWA60NC60WDR
STMicroelectronics
Deskripsyon:IGBT 600V 130A 340W TO247
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STGWA40S120DF3
STMicroelectronics
Deskripsyon:IGBT 1200V 40A TO247-3L
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STGW30M65DF2
STMicroelectronics
Deskripsyon:TRENCH GATE FIELD-STOP IGBT M SE
- AMI Semiconductor / ON Semiconductor
- - Sou Semiconductor (Nasdaq: ON) ap kondwi enèji efikas enèji, abilite kliyan pou redwi itilizasyon enèji mondyal. Konpayi an ofri yon pòtfolyo konplè enèji efikas pouvwa ak jesyon siyal, lojik, solisyon disrè ak koutim ede enjenyè konsepsyon rezoud defi inik yo nan otomobil, kominikasyon, i...Detay yo
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NGTG35N65FL2WG
AMI Semiconductor / ON Semiconductor
Deskripsyon:IGBT 650V 60A 167W TO247
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NGTB40N65IHRTG
AMI Semiconductor / ON Semiconductor
Deskripsyon:650V/40A RC IGBT
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NGTB50N60FWG
ON Semiconductor
Deskripsyon:IGBT 600V 100A 223W TO247
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FGH25T120SMD-F155
AMI Semiconductor / ON Semiconductor
Deskripsyon:IGBT 1200V 50A 428W TO247-3
- Renesas Electronics America
- - Renesas Elektwonik Amerik desen ak fabrique solisyon trè entegre semiconductor sistèm pou mache otomobil, mobil ak PC / AV. Etabli sou 1 avril 2003, kòm yon antrepriz ant Hitachi, Ltd. ak Mitsubishi Electric Corporation ak biwo santral li nan Tokyo, Japon, Renesas se youn nan pi gwo konpayi yo ...Detay yo
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RJH60F7DPQ-A0#T0
Renesas Electronics America
Deskripsyon:IGBT 600V 90A 328.9W TO247A
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RJH60F6BDPQ-A0#T0
Renesas Electronics America
Deskripsyon:IGBT 600V 85A 297.6W TO-247A
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RJP60D0DPK-00#T0
Renesas Electronics America
Deskripsyon:IGBT 600V 45A 140W TO-3P
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RJH60F3DPQ-A0#T0
Renesas Electronics America
Deskripsyon:IGBT 600V 40A 178.5W TO-247A
- LAPIS Semiconductor
- - ROHM te etabli nan Kyoto, Japon, nan 1958. ROHM desen ak fabrique semi-conducteurs, sikui entegre ak lòt eleman elektwonik. Eleman sa yo jwenn yon kay nan mache dinamik ak tout tan-ap grandi, òdinatè, otomobil ak konsomatè elektwonik mache yo. Gen kèk nan ekipman ki pi inovatè ak aparèy ki ...Detay yo
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RGT80TS65DGC11
LAPIS Semiconductor
Deskripsyon:IGBT 650V 70A 234W TO-247N
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RGTH00TS65GC11
LAPIS Semiconductor
Deskripsyon:IGBT 650V 85A 277W TO-247N
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RGTH50TS65DGC11
LAPIS Semiconductor
Deskripsyon:IGBT 650V 50A 174W TO-247N